Process for forming metalized contacts to periphery transistors

外围晶体管的金属化触点形成方法

Abstract

一种方法和设备,它们针对在半导体器件的外围逻辑电路区域内形成金属插栓(75,76,95,96)以便接触在该外围逻辑电路区域内晶体管的N+和P+掺杂区域(25,26)两者。该金属插栓在用于晶片制造的全部高温处理完成之后形成。而且该金属插栓在没有金属扩散到该基片活性区域内的情况下形成。在从该半导体器件的顶视图观察时该金属插栓形成椭圆形小片。
A process and apparatus directed to forming metal plugs (75,76,95,96) in a peripheral logic circuitry area of a semiconductor device to contact both N+ and P+ doped regions (25,26) of transistors in the peripheral logic circuitry area. The metal plugs are formed after all high temperature processing used in wafer fabrication is completed. The metal plugs are formed without metal diffusing into theactive areas of the substrate. The metal plugs may form an oval slot as seen from a top down view of the semiconductor device.

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